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የሲሲ ሽፋን ግራፋይት በርሜል ሱሴፕተር
ፈጣን ዝርዝር:
1. Other names: Epitaxial furnace graphite barrel, SiC coated wafer tray,wafer susceptor barrel type,graphite susceptor
2. Application: For wafer epitaxial growth process
3. Core parameters: The homogeneity of gas flow field and thermal field in the reaction chamber can be optimized by using isostatic pressure high purity graphite matrix combined with chemical vapor deposition (CVD) SiC coating technology with temperature resistance of 1600℃, thermal conductivity of 300W/m·K and purity ≥99.9995%, and the defect density of epitaxial layer can be
significantly reduced.
መግለጫ
SiC coating Graphite Wafer Epitaxy Barrel Suceptor is the core consumable for Si epitaxial growth equipment, and its design combines the high thermal conductivity of graphite with the extreme corrosion resistance of SiC coatings. The substrate is a high purity Sigley graphite (purity ≥99.9995%) formed by isostatic pressing process. The 50μm dense β-SiC coating was deposited on the surface by CVD process. It effectively blocks impurity release of the graphite matrix in high temperature (1200-1800℃) and aggressive gases (such as SiH4, ሐ3H8እና ኤች2), avoiding wafer contamination. Barrel design (for 4/6/8 inch equipment) By optimizing the airflow path and thermal field distribution, the thickness uniformity of the epitaxial layer is controlled within ±1.5%, and the defect density is reduced to < 0.05cm-2. In addition, the thermal expansion coefficient of SiC coating and graphite matrix is highly matched (4.5×10-6/K vs 4.8×10-6/K), avoiding coating cracking or particle shedding caused by high temperature stress, and ensuring long-term stable operation of equipment. The component has been applied to the wafer epitaxy production line of the leading semiconductor manufacturers in China, the single-furnace epitaxy cost has been reduced by 40%, and the device yield has been increased to 98%.
Barrel type susceptor compared to pancake susceptor
| ባለታሪክ | Barrel Type Susceptor | Pancake Susceptor |
| የሙቀት ተመሳሳይነት | Slightly lower uniformity due to vertical airflow and radiation symmetry (complex temperature compensation required). | The thermal field symmetry is high, and the temperature uniformity in plane is better. |
| Gas flow efficiency | The airflow spirals along the barrel wall, and the edge wafers are easily etched/deposited. | The flow is perpendicular to the wafer surface, and the flow and direction are easily controlled. |
| Capacity and cost | High throughput, suitable for mass production (high number of wafers per unit time). | Low throughput, suitable for R&D/small batch production. |
| የጥገና ውስብስብነት | The structure is complex, and the cleaning and replacement takes a long time. | Open design, easy maintenance. |
መግለጫዎች
| የሲቪዲ ሲሲ ሽፋን መሰረታዊ አካላዊ ባህሪያት | |
| ንብረት | የተለመደው እሴት |
| ክሪስታል መዋቅር | FCC β ደረጃ polycrystalline፣ በዋናነት (111) ተኮር |
| Density | 3.21 ግ/ሴሜ³ |
| ግትርነት | 2500 ቪከርስ ጠንካራነት (500 ግ ጭነት) |
| የእህል መጠን | 2 ~ 10μm |
| የኬሚካል ንፅህና | 99.99995% |
| የሙቀት አቅም | 640 ጄ·kg-1·K-1 |
| Sublimation የሙቀት | 2700 ℃ |
| ተለዋዋጭ ጥንካሬ | 415 MPa RT 4-ነጥብ |
| የወጣት ሞዱሉስ | 430 ጂፒኤ 4 ፒት መታጠፍ፣ 1300 ℃ |
| የሙቀት ማስተላለፊያ | 300W·m-1·K-1 |
| የሙቀት መስፋፋት (ሲቲኢ) | 4.5 x 10-6K-1 |
መተግበሪያዎች
Used for silicon epitaxy/CVD process.
Most used in traditional LPE or CVD devices (such as early Aixtron systems).
የውድድር ብልጫ
Resistance to extreme corrosion environment: β-SiC coating is resistant to plasma erosion and oxidation, and its life is 5 times longer than that of uncoated graphite.
Precise thermal field control: barrel structure reduces turbulence, thermal conductivity matches the substrate, and avoids thermal stress failure.
Zero contamination risk: ultra-high purity substrate and coating, metal impurities (Fe, Al) content < 0.1ppm.
Whole process service: support matrix processing, coating deposition, performance test one-stop delivery.
