የሲሊኮን ካርቦይድ ሴራሚክ ዋፈር ጀልባ
| መነሻ ቦታ: | ቻይና |
| ብራንድ ስም: | ሴሚክስላብ |
| የሞዴል ቁጥር: | TC-SIC-WB-2501 |
| የእውቅና ማረጋገጫ: | አይኤስኦ 9001 |
| ትንሹ ትዕዛዝ ብዛት: | 1 አሃድ |
| ዋጋ: | ለግል ብጁ ጥቅስ ያነጋግሩ |
| ማሸግ ዝርዝሮች: | ፀረ-ስታቲክ ፎም + የእንጨት ሳጥኖች (ሊበጁ የሚችሉ) |
| የመላኪያ ጊዜ: | የማስረከቢያ ጊዜ፡ ከ30-45 ቀናት ከትዕዛዝ ማረጋገጫ በኋላ |
| የክፍያ ውል: | ቲ / T |
| አቅርቦት ችሎታ: | 100 Units/Month |
መግለጫ
Silicon Carbide Ceramic Wafer Boat is a high performance carrying tool designed for semiconductor manufacturing and photovoltaic energy process. It is made of high-purity silicon carbide (SiC) ceramic material, which is made by advanced pressless sintering process. It has excellent high temperature resistance, chemical stability and mechanical strength, and becomes the core consumables in wafer transmission, high temperature annealing and other precision processes.
1. Stability in extreme environments
The molecular structure of sic ceramics gives it ultra-high thermal stability, which can maintain its structural integrity in a continuous high temperature environment of 1650°C. Compared with conventional quartz or alumina materials, the thermal expansion coefficient of sic boats is very low (only 4.5×10-6/°C), effectively avoiding deformation or cracking caused by sudden temperature changes. In semiconductor manufacturing, this property can significantly reduce the displacement deviation of the wafer in the high temperature process and improve the yield.
2. Unparalleled corrosion resistance
Silicon carbide ceramics show strong resistance to strong acids (such as hydrofluoric acid, sulfuric acid), strong bases and oxidizing gases (Cl₂, O₂). Even in sulfur or halogen atmosphere at 1400°C, the surface remains smooth and corrosion-free, ensuring that no contamination remains on the wafer surface.
3. Long service life and economic benefits
Through the unique surface densification treatment process, the wear resistance of the silicon carbide boat is more than 15 times higher than that of traditional materials. The actual test shows that after 1000 cycles in 1400°C oxidation atmosphere, the surface roughness is still lower than 0.2μm of Ra, and the turnover times can reach 5-8 times of that of ordinary ceramic boats, which greatly reduces the frequency of equipment shutdown and replacement, and the comprehensive cost saving is over 30%.
ፈጣን ዝርዝር:
1. Other names: silicon carbide crystal boat, semiconductor ceramic carrier.
2. Application: Used in high temperature diffusion, oxidation and annealing process in semiconductor manufacturing to carry silicon wafer and ensure uniform heat distribution.
3. Core parameters: purity ≥99.99%, maximum temperature resistance of 1500℃, low thermal expansion coefficient (4.5×10-6/℃), strong thermal shock resistance.
መግለጫዎች
| የሲንተርድ ሲሊከን ካርቦይድ አካላዊ ባህሪያት | |
| ንብረት | የተለመደው እሴት |
| የኬሚካል ጥንቅር | SiC>98% |
| የጅምላ እፍጋት | >3.07 ግ/ሴሜ³ |
| ግልጽ የሆነ ቀዳዳነት ግልጽ የሆነ ቀዳዳነት | |
| በ 20 ℃ ላይ የመበጠስ ሞዱል | 270 ሜጋ |
| በ 1200 ℃ ላይ የመበጠስ ሞዱል | 290 ሜጋ |
| ጥንካሬ በ20℃ | 2400 ኪ.ግ/ሚሜ² |
| የስብራት ጥንካሬ በ20% | 3.3 MPa · m1/2 |
| የሙቀት ማስተላለፊያ በ1200℃ | 45 ወ/ሜ·ኬ |
| የሙቀት መስፋፋት በ20-1200℃ | 4.5 x 10-6/℃ |
| ከፍተኛ የስራ ሙቀት | 1400 ℃ |
| የሙቀት ድንጋጤ መቋቋም በ1200℃ | ጥሩ |
| Physical properties of Recrystallized Silicon Carbide | |
| ንብረት | የተለመደው እሴት |
| Working temperature (°C) | 1600°C (with oxygen), 1700°C (reducing environment) |
| የሲሲ ይዘት | > 99.96% |
| Free Si content | <0.1% |
| የጅምላ ጥንካሬ | 2.60-2.70 g/cm3 |
| ግልጽ porosity | <16% |
| Compression strength | > 600 MPa |
| Cold bending strength | 80-90 MPa (20°C) |
| Hot bending strength | 90-100 MPa (1400°C) |
| Thermal expansion @1500°C | 4.7x10-6/ ° ሴ |
| Thermal conductivity @1200°C | 23 W/m·K |
| ተለዋዋጭ ሞዱለስ | 240 ጂ |
| የሙቀት መጨናነቅ ችግር | Extremely good |
መተግበሪያዎች
High temperature heat treatment of semiconductor wafers (oxidation, annealing, doping).
Photovoltaic industry wafer coating and sintering.
የውድድር ብልጫ
Ultra-high temperature stability: long-term resistance to 1500°C high temperature, no deformation or performance attenuation.
Low pollution design: high purity material + non-adhesive process, avoid metal ion pollution.
Long life: excellent thermal shock resistance, longer service life than quartz carrier 3-5 times.
Flexible customization: support size, slot spacing, depth customization of surface treatment.

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